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| NTE180 (PNP) & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: D High DC Current Gain: hFE = 25 - 100 @ IC = 7.5A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector-Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W Electrical Characteristics: (TC =+25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CER IC = 200mA, RBE = 100, Note 1 Collector-Emitter Sustaining Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current VCEO(sus) IC = 200mA, Note 1 ICBO IEBO VCB = 100V, IE = 0 VCB = 100V, IE = 0, TC = +150C VBE = 4V, IC = 0 100 90 - - - - - - - - - - 1.0 5.0 1.0 V V mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%. Electrical Characteristics (Cont'd): (TC =+25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain Base-Emitter ON Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product fT IC = 1A, VCE = 10V, f = 1MHz 2.0 - - MHz hFE VBE(on) VCE(sat) VBE(sat) IC = 7.5A, VCE = 2V IC = 7.5A, VCE = 2V IC = 7.5A, IB = 750mA IC = 7.5A, IB = 750mA 25 - - - - - - - 100 1.3 0.8 1.3 V V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%. Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (hFE) matched to within 10% of each other. Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and NTE181 (NPN). .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE181
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